400 Picosecond Flash – The Future is Here

⚡ China just unveiled the fastest flash memory ever built — and it's not just fast, it's 100,000 times faster than traditional SRAM cache. Dubbed “Poxiao” (Dawn), this memory operates at a blazing speed of 0.4 nanoseconds for both read and write operations.

Developed by scientists at Fudan University, this breakthrough leverages graphene and 2D materials like tungsten diselenide (WSe₂) to inject "hot electrons" with nearly massless behavior, bypassing the speed limits of conventional silicon-based transistors.

➡️ While the prototype only holds 1 KB, the team aims for commercial-scale chips with tens of megabytes in just a few years.

This isn’t just faster memory — it’s a leap into post-silicon physics. A new era of memory has begun.

#FlashMemory #ChinaTech #Graphene #QuantumTech #Poxiao #TechNews #NanoTech #MemoryRevolution #2Dmaterials #FutureOfComputing**

Видео 400 Picosecond Flash – The Future is Here канала Xenon Lab | Science & Technology