Wide Bandgap Semiconductor Materials & Microwave PAs - Webinar
Find out more at http://explorerf.com/gallium-nitride1.html. This is a FREE webinar on wide bandgap semiconductor materials and devices with a specific focus on Gallium Nitride (GaN) High Electron Mobility Transistors (HEMTs) as applied to Microwave Power Amplifiers. The topics presented in this webinar are summarised below:
Introduction
- High Power Microwave PAs
- Vacuum Electron Devices VS Solid State Transistors
Solid State PAs
- Performance Limitations
- Desirable Semiconductor Material Properties
- Wide Bandgap Materials (SiC, GaN, Diamond)
High Electron Mobility Transistors (HEMTs)
- Heterostructures and Modulation Doping
- Performance Enhancements at Microwave Frequencies
Gallium Nitride (GaN) HEMTs
- Structure
- Pros & Cons
- Polarisation Effects
- Surface States
- Virtual Gate
- Buffer Traps
- Current Collapse
- Challenges of Pulse I-V characterisation
- Drain Current Transients
- Experimental Examples: Cree and Nitronex
Improvements
- Reducing Trapping Effects
- Enhancing Performance with Field Plates
Commercial availability
Conclusions
Find out more at http://explorerf.com/gallium-nitride.html
The videos featured in my multimedia textbook "Conquer Radio Frequency" are now available on my YouTube channel!
They are presented in sections, each corresponding to one of the five chapters, which may be easily accessed from the channel's home page https://youtube.com/rfmicrowave. A link to download the e-book is also provided in each video description.
The material may also be accessed at http://explorerf.com/crf.html
Francesco Fornetti
Видео Wide Bandgap Semiconductor Materials & Microwave PAs - Webinar канала Explore RF
Introduction
- High Power Microwave PAs
- Vacuum Electron Devices VS Solid State Transistors
Solid State PAs
- Performance Limitations
- Desirable Semiconductor Material Properties
- Wide Bandgap Materials (SiC, GaN, Diamond)
High Electron Mobility Transistors (HEMTs)
- Heterostructures and Modulation Doping
- Performance Enhancements at Microwave Frequencies
Gallium Nitride (GaN) HEMTs
- Structure
- Pros & Cons
- Polarisation Effects
- Surface States
- Virtual Gate
- Buffer Traps
- Current Collapse
- Challenges of Pulse I-V characterisation
- Drain Current Transients
- Experimental Examples: Cree and Nitronex
Improvements
- Reducing Trapping Effects
- Enhancing Performance with Field Plates
Commercial availability
Conclusions
Find out more at http://explorerf.com/gallium-nitride.html
The videos featured in my multimedia textbook "Conquer Radio Frequency" are now available on my YouTube channel!
They are presented in sections, each corresponding to one of the five chapters, which may be easily accessed from the channel's home page https://youtube.com/rfmicrowave. A link to download the e-book is also provided in each video description.
The material may also be accessed at http://explorerf.com/crf.html
Francesco Fornetti
Видео Wide Bandgap Semiconductor Materials & Microwave PAs - Webinar канала Explore RF
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