Atomic Layer Deposition Principle - an Introduction to ALD

ALD - Atomic Layer Deposition is an exciting technique to prepare desired materials one atomic layer at a time. In this video we explain the deposition process with an ALD reactor that uses gas phase precursors (chemicals). These precursors enter the reaction chamber one at a time along with the carrier gas (usually nitrogen in gas phase processes). Each time a precursor enters the chamber, it reacts with the substrate surface in a self limiting manner, forming a thin layer. The excess precursor molecules and reaction byproducts are removed after each step with the help of the carrier gas and a vacuum pump. A thermocouple and computer controlled heaters ensure the desired deposition temperature, which gives control over the deposited films crystal structure. For example by using a correct deposition temperature, amorphous, anatase phase or rutile phase titanium dioxide can easily be obtained. The greatest benefits of ALD is the possibility to apply a thin film with well defined thickness and composition on even sophisticated three-dimensional objects. The applications for atomic layer deposition technique have dramatically increased over the last few decades as it is now used for the preparation of solar cells, ultra thin corrosion resistant coatings, microelectronic devices and even for the enhancement of medical implants.

Special thanks to prof. Jaan Aarik for the review and Tauno Kahro for making the fancy introduction!

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Видео Atomic Layer Deposition Principle - an Introduction to ALD канала Captain Corrosion