SiC FETs: Easily Driving Higher Power Density

Join the webinar to discover how the pursuit for lower RDS(on) in SiC FET devices (wide bandgap) is helping power designers successfully deliver next-generation performance and innovation through higher efficiency, lower losses, smaller form factors and reduced total cost versus silicon MOSFETs and other silicon carbide MOSFETs.

Agenda:
- Introducing new UF3SC SiC FETs – RDS(on) less than 10mΩ
- The cascode technology “secret sauce”
- New design possibilities
- EV inverter
- Fast battery charging
- Solar inverter
- Circuit protection
- Design support/content

Видео SiC FETs: Easily Driving Higher Power Density канала UnitedSiC is now Qorvo